Modulation of photonic bandgap and localized states by dielectric constant contrast and filling factor in photonic crystals 介电常数对比和填充率对光子晶体中光子禁带和局域态的调节
The tail of localized states in the band gap is formed , and in the high temperature range , the behavior of metallic conduction can be observed 并根据其电导、载流子浓度、迁移率随温度的变化分析zno : al薄膜的导电机制。
From an analytic treatment , the state is determined by the nanotube diameter rather than chirality . the corresponding image of local density of states in real space shows a highly localized state around the defect 然后逐点计算局域态密度发现,在实空间准束缚态是一个非常局域化的效应,离开缺陷即迅速衰减。
There is also energy band structure for photons in photonic crystal , which is similar as that for electrons in natural crystal ( electronic crysta1 ) . localized state will ap - pear if there is an impurity or defect 光子晶体中的光子与一般晶体(电子晶体)中的电子相似,都有能带结构,都会因为有杂质和缺陷态的存在而存在局域态。
Secondly , based on the discussion of the dynamical characteristics of bloch electron driven by two - mode ac electrical fields we find a localization condition of the bloch electron on a localized state and then extend this result to the multi - field case 接着讨论了在双模交流场驱动下bloch电子的动力学特性,发现了使bloch电子处于局域态的条件,并把这个结论推广到了任意多个模的交流电场驱动的情况。